Deposition of heteroepitaxial In2O3 thin films by molecular beam epitaxy
Identifieur interne : 015933 ( Main/Repository ); précédent : 015932; suivant : 015934Deposition of heteroepitaxial In2O3 thin films by molecular beam epitaxy
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Abstract
Highly oriented thin film In2O3 was heteroepitaxially grown on an optically polished (001) plane of single crystalline yttria stabilized zirconia (YSZ) substrate using molecular beam epitaxy (MBE). The full-width at half maximum (FWHM) of the X-ray rocking curve was 0.08° for 200-nm-thick In2O3 layers indicating excellent uniformity of the crystallographic orientation compared with the heteroepitaxially-grown In2O3 deposited by a conventional method such as electron-beam (e-beam) evaporation. The minimum yield (χmin) of the MBE grown In2O3 film obtained from Rutherford backscattering (RBS) spectra was also extremely small with a value of 3.1% implying high crystallinity with very low lattice defect density. © 1998 Publication Board, Japanese Journal of Applied Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Deposition of heteroepitaxial In<sub>2</sub>O<sub>3</sub> thin films by molecular beam epitaxy</title><author><name sortKey="Taga, Naoaki" uniqKey="Taga N">Naoaki Taga</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Center, Asahi Glass Co., Ltd., Kanagawa-ku, Yokohama 221-8755, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Research Center, Asahi Glass Co., Ltd., Kanagawa-ku, Yokohama 221-8755</wicri:regionArea><wicri:noRegion>Yokohama 221-8755</wicri:noRegion></affiliation></author><author><name sortKey="Maekawa, Mikako" uniqKey="Maekawa M">Mikako Maekawa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Center, Asahi Glass Co., Ltd., Kanagawa-ku, Yokohama 221-8755, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Research Center, Asahi Glass Co., Ltd., Kanagawa-ku, Yokohama 221-8755</wicri:regionArea><wicri:noRegion>Yokohama 221-8755</wicri:noRegion></affiliation></author><author><name sortKey="Shigesato, Yuzo" uniqKey="Shigesato Y">Yuzo Shigesato</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>College of Science and Engineering, Aoyama Gakuin University, Setagaya-ku, Tokyo 157-8572, Japan</s1><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>College of Science and Engineering, Aoyama Gakuin University, Setagaya-ku, Tokyo 157-8572</wicri:regionArea><placeName><settlement type="city">Tokyo</settlement></placeName></affiliation></author><author><name sortKey="Yasui, Itaru" uniqKey="Yasui I">Itaru Yasui</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Industrial Science, University of Tokyo, 7-22-1, Minato-ku, Tokyo 106-8558, Japan</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Institute of Industrial Science, University of Tokyo, 7-22-1, Minato-ku, Tokyo 106-8558</wicri:regionArea><placeName><settlement type="city">Tokyo</settlement></placeName></affiliation></author><author><name sortKey="Kakei, Masayuki" uniqKey="Kakei M">Masayuki Kakei</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Industrial Science, University of Tokyo, 7-22-1, Minato-ku, Tokyo 106-8558, Japan</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Institute of Industrial Science, University of Tokyo, 7-22-1, Minato-ku, Tokyo 106-8558</wicri:regionArea><placeName><settlement type="city">Tokyo</settlement></placeName></affiliation></author><author><name sortKey="Haynes, T E" uniqKey="Haynes T">T. E. Haynes</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Solid State Division, Oak Ridge National Laboratory, 2008, Oak Ridge, Tennessee 37831</s1><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Tennessee</region></placeName><wicri:cityArea>Solid State Division, Oak Ridge National Laboratory, 2008, Oak Ridge</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0098495</idno><date when="1998-12">1998-12</date><idno type="stanalyst">PASCAL 99-0098495 AIP</idno><idno type="RBID">Pascal:99-0098495</idno><idno type="wicri:Area/Main/Corpus">015971</idno><idno type="wicri:Area/Main/Repository">015933</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-4922</idno><title level="j" type="abbreviated">Jpn. J. Appl. Phys., Part I</title><title level="j" type="main">Japanese Journal of Applied Physics, Part I : Regular papers, short notes & review papers</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal orientation</term><term>Experimental study</term><term>Indium compounds</term><term>Molecular beam epitaxy</term><term>Oxygen compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8115H</term><term>6855J</term><term>Etude expérimentale</term><term>Indium composé</term><term>Oxygène composé</term><term>Epitaxie jet moléculaire</term><term>Orientation cristalline</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Highly oriented thin film In<sub>2</sub>O<sub>3</sub> was heteroepitaxially grown on an optically polished (001) plane of single crystalline yttria stabilized zirconia (YSZ) substrate using molecular beam epitaxy (MBE). The full-width at half maximum (FWHM) of the X-ray rocking curve was 0.08° for 200-nm-thick In<sub>2</sub>O<sub>3</sub> layers indicating excellent uniformity of the crystallographic orientation compared with the heteroepitaxially-grown In<sub>2</sub>O<sub>3</sub> deposited by a conventional method such as electron-beam (e-beam) evaporation. The minimum yield (χ<sub>min</sub>) of the MBE grown In<sub>2</sub>O<sub>3</sub> film obtained from Rutherford backscattering (RBS) spectra was also extremely small with a value of 3.1% implying high crystallinity with very low lattice defect density. © 1998 Publication Board, Japanese Journal of Applied Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-4922</s0></fA01><fA02 i1="01"><s0>JAPNDE</s0></fA02><fA03 i2="1"><s0>Jpn. J. Appl. Phys., Part I</s0></fA03><fA05><s2>37</s2></fA05><fA06><s2>12A</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Deposition of heteroepitaxial In<sub>2</sub>O<sub>3</sub> thin films by molecular beam epitaxy</s1></fA08><fA11 i1="01" i2="1"><s1>TAGA (Naoaki)</s1></fA11><fA11 i1="02" i2="1"><s1>MAEKAWA (Mikako)</s1></fA11><fA11 i1="03" i2="1"><s1>SHIGESATO (Yuzo)</s1></fA11><fA11 i1="04" i2="1"><s1>YASUI (Itaru)</s1></fA11><fA11 i1="05" i2="1"><s1>KAKEI (Masayuki)</s1></fA11><fA11 i1="06" i2="1"><s1>HAYNES (T. E.)</s1></fA11><fA14 i1="01"><s1>Research Center, Asahi Glass Co., Ltd., Kanagawa-ku, Yokohama 221-8755, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>College of Science and Engineering, Aoyama Gakuin University, Setagaya-ku, Tokyo 157-8572, Japan</s1><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Institute of Industrial Science, University of Tokyo, 7-22-1, Minato-ku, Tokyo 106-8558, Japan</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="04"><s1>Solid State Division, Oak Ridge National Laboratory, 2008, Oak Ridge, Tennessee 37831</s1><sZ>6 aut.</sZ></fA14><fA20><s1>6524-6529</s1></fA20><fA21><s1>1998-12</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>9959</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0098495</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Japanese Journal of Applied Physics, Part I : Regular papers, short notes & review papers</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Highly oriented thin film In<sub>2</sub>O<sub>3</sub> was heteroepitaxially grown on an optically polished (001) plane of single crystalline yttria stabilized zirconia (YSZ) substrate using molecular beam epitaxy (MBE). The full-width at half maximum (FWHM) of the X-ray rocking curve was 0.08° for 200-nm-thick In<sub>2</sub>O<sub>3</sub> layers indicating excellent uniformity of the crystallographic orientation compared with the heteroepitaxially-grown In<sub>2</sub>O<sub>3</sub> deposited by a conventional method such as electron-beam (e-beam) evaporation. The minimum yield (χ<sub>min</sub>) of the MBE grown In<sub>2</sub>O<sub>3</sub> film obtained from Rutherford backscattering (RBS) spectra was also extremely small with a value of 3.1% implying high crystallinity with very low lattice defect density. © 1998 Publication Board, Japanese Journal of Applied Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15H</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H55J</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8115H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6855J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Oxygène composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Oxygen compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Orientation cristalline</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Crystal orientation</s0></fC03><fN21><s1>053</s1></fN21><fN47 i1="01" i2="1"><s0>9906M000520</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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